Aluminum Nitride RF MEMS

Aluminum Nitride (AlN) piezoelectric NEMS resonant devices can address some of the most important challenges in the areas of physical, chemical and biological detection and can be simultaneously used to synthesize high-Q  RF front-end components. By taking advantage of the extraordinary transduction properties of AlN combined with the unique physical, optical and electrical properties of advanced materials such as graphene, photonic metamaterials, and magnetic materials, we have been able to implement multiple and advanced sensing and RF communication functionalities in a small footprint.