We have demonstrated a Ni/PMN-PT ME heterostructure providing an electric-field-induced switching between two reversible and permanent magnetic easy axes perpendicular to each other. The tunable remanent strain defines the initial magnetoelastic anisotropy while the giant strain hysteresis reversibly and permanently reorients the magnetization state. This experimental data were used to design a ME-MRAM with MTJ unit for information storage.
This magnetoelectric memory approach provides a promising technology for spintronics and MRAM applications.