Tag Archives: Research_Processing

Tessellated Silicon-Structures for Monocentric Imagers

Compared with conventional planar optical image sensors, a curved focal plane array can simplify the lens design and improve the field of view. In this paper, we introduce the design and implementation of a segmented, hemispherical, CMOS-compatible silicon image plane

Self-Aligned T-Gate High-Purity Semiconducting Carbon Nanotube RF Transistors

Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such transistors has been very challenging. In this paper, we introduce a self-aligned fabrication

Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes

Atomic layer deposited (ALD) Pb(Zr,Ti)Ox (PZT) ultra-thin films were synthesized on an ALD Al2O3 insulation layer on 4H-SiC substrate for metal-ferroelectric-insulator-semiconductor (MFIS) device applications. The as-deposited PZT was amorphous but crystallized into a perovskite polycrystalline structure with a preferred [002]