Category Archives: Publications

2 Papers accepted for presentation at IEEE MEMS 2018 Conference

The 2 papers have been accepted for presentation at IEEE MEMS 2018 Conference to be held in Belfast, Northern Ireland, UK on 21-25 January 2018. 1. Tao Wu, Zhenyun Qian, and Matteo Rinaldi, “LOW COST THIN FILM ENCAPSULATION FOR ALN

We present our work in 2017 IEEE SENSORS Conference!

Dr. Tao Wu attended and present work titled “Design and Fabrication of AlN RF MEMS Switch For Near-Zero Power RF Wake-Up Receivers” on 2017 IEEE SENSORS Conference held in Glasgow, Scotland, Oct. 30 – Nov. 1, 2017. We describe an AlN-based

Aluminum Nitride RF MEMS

Aluminum Nitride (AlN) piezoelectric nano-plate NEMS resonant devices that can address some of the most important challenges in the areas of physical, chemical and biological detection and can be simultaneously used to synthesize high-Q reconfigurable and adaptive radio frequency (RF)

Tessellated Silicon-Structures for Monocentric Imagers

Compared with conventional planar optical image sensors, a curved focal plane array can simplify the lens design and improve the field of view. In this paper, we introduce the design and implementation of a segmented, hemispherical, CMOS-compatible silicon image plane

Magnetic Nano-Ring and Single Domain

We have patterned magnetic nano-ring and single domain structures of Ni on (011) PMN-PT substrate, and used MFM and X-PEEM technique to characterize the magnetic domain movement in patterned Ni nanostructures. We have achieved a permanent 90° rotation in the

Giant Tunable Piezoelectric Remanent Strain and its Application on ME-RAM

We have demonstrated a Ni/PMN-PT ME heterostructure providing an electric-field-induced switching between two reversible and permanent magnetic easy axes perpendicular to each other. The tunable remanent strain defines the initial magnetoelastic anisotropy while the giant strain hysteresis reversibly and permanently

Giant piezoelectric strain hysteresis and novel ferroelectric properties of (011) [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals

The ferroelectric (011) [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals show two giant reversible and stable remanent strain states and tunable remanent strain properties are achieved by properly reversing  the electric field from the depolarized direction. The unique piezoelectric strain response, especially

Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes

Atomic layer deposited (ALD) Pb(Zr,Ti)Ox (PZT) ultra-thin films were synthesized on an ALD Al2O3 insulation layer on 4H-SiC substrate for metal-ferroelectric-insulator-semiconductor (MFIS) device applications. The as-deposited PZT was amorphous but crystallized into a perovskite polycrystalline structure with a preferred [002]