Category Archives: Knowledge

中国 MEMS 产业发展趋势分析及建议

转载 SIMIT战略研究室  中国科学院上海微系统与信息技术研究所

Aluminum Nitride RF MEMS

Aluminum Nitride (AlN) piezoelectric nano-plate NEMS resonant devices that can address some of the most important challenges in the areas of physical, chemical and biological detection and can be simultaneously used to synthesize high-Q reconfigurable and adaptive radio frequency (RF)

Tessellated Silicon-Structures for Monocentric Imagers

Compared with conventional planar optical image sensors, a curved focal plane array can simplify the lens design and improve the field of view. In this paper, we introduce the design and implementation of a segmented, hemispherical, CMOS-compatible silicon image plane

Magnetic Nano-Ring and Single Domain

We have patterned magnetic nano-ring and single domain structures of Ni on (011) PMN-PT substrate, and used MFM and X-PEEM technique to characterize the magnetic domain movement in patterned Ni nanostructures. We have achieved a permanent 90° rotation in the

Giant Tunable Piezoelectric Remanent Strain and its Application on ME-RAM

We have demonstrated a Ni/PMN-PT ME heterostructure providing an electric-field-induced switching between two reversible and permanent magnetic easy axes perpendicular to each other. The tunable remanent strain defines the initial magnetoelastic anisotropy while the giant strain hysteresis reversibly and permanently

Complex MEMS Devices made by Sandia National Laboratories

Giant piezoelectric strain hysteresis and novel ferroelectric properties of (011) [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals

The ferroelectric (011) [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals show two giant reversible and stable remanent strain states and tunable remanent strain properties are achieved by properly reversing  the electric field from the depolarized direction. The unique piezoelectric strain response, especially

Self-Aligned T-Gate High-Purity Semiconducting Carbon Nanotube RF Transistors

Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such transistors has been very challenging. In this paper, we introduce a self-aligned fabrication

MEMS: Next Wave Silicon Revolution

We present you the Next Wave Silicon Revolution from MEMS !

MEMS Websites

Some University MEMS Groups: Berkeley Sensors and Actuators Center: Standford Prof. Roger T. Howe group: Standford Prof. Thomas Kenny group: Standford Prof. Beth Pruitt group: Northeastern Prof. Matteo Rinaldi group: UIUC Prof. Songbin