Tessellated Silicon-Structures for Monocentric Imagers

Compared with conventional planar optical image sensors, a curved focal plane array can simplify the lens design and improve the field of view. In this paper, we introduce the design and implementation of a segmented, hemispherical, CMOS-compatible silicon image plane

Magnetic Nano-Ring and Single Domain

We have patterned magnetic nano-ring and single domain structures of Ni on (011) PMN-PT substrate, and used MFM and X-PEEM technique to characterize the magnetic domain movement in patterned Ni nanostructures. We have achieved a permanent 90° rotation in the

Giant Tunable Piezoelectric Remanent Strain and its Application on ME-RAM

We have demonstrated a Ni/PMN-PT ME heterostructure providing an electric-field-induced switching between two reversible and permanent magnetic easy axes perpendicular to each other. The tunable remanent strain defines the initial magnetoelastic anisotropy while the giant strain hysteresis reversibly and permanently

Complex MEMS Demo by Sandia National Laboratories

[KGVID width=”480″ height=”360″]http://small.shanghaitech.edu.cn/wp-content/uploads/2017/11/Intelligent-micromachine720kbs.mp4[/KGVID]

Giant piezoelectric strain hysteresis and novel ferroelectric properties of (011) [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals

The ferroelectric (011) [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals show two giant reversible and stable remanent strain states and tunable remanent strain properties are achieved by properly reversing  the electric field from the depolarized direction. The unique piezoelectric strain response, especially

Self-Aligned T-Gate High-Purity Semiconducting Carbon Nanotube RF Transistors

Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such transistors has been very challenging. In this paper, we introduce a self-aligned fabrication

MEMS: Next Wave Silicon Revolution

We present you the Next Wave Silicon Revolution from MEMS !

Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes

Atomic layer deposited (ALD) Pb(Zr,Ti)Ox (PZT) ultra-thin films were synthesized on an ALD Al2O3 insulation layer on 4H-SiC substrate for metal-ferroelectric-insulator-semiconductor (MFIS) device applications. The as-deposited PZT was amorphous but crystallized into a perovskite polycrystalline structure with a preferred [002]

MEMS Websites

Some University MEMS Groups: Berkeley Sensors and Actuators Center: http://www-bsac.eecs.berkeley.edu/ Standford Prof. Roger T. Howe group:  https://nems.stanford.edu/ Standford Prof. Thomas Kenny group:   https://micromachine.stanford.edu/ Standford Prof. Beth Pruitt group:   https://microsystems.stanford.edu/ Northeastern Prof. Matteo Rinaldi group: https://web.northeastern.edu/nemslab/ UIUC Prof. Songbin

An Academic Career in Engineering

Thoughts from Roger T. Howe, the William E. Ayer Professor in the Department of Electrical Engineering at Stanford University.